TY - JOUR
T1 - Electronic structure and transport measurements of amorphous transition-metal oxides
T2 - Observation of Fermi glass behavior
AU - Goldfarb, I.
AU - Miao, F.
AU - Yang, J. Joshua
AU - Yi, W.
AU - Strachan, J. P.
AU - Zhang, M. X.
AU - Pickett, M. D.
AU - Medeiros-Ribeiro, G.
AU - Williams, R. Stanley
N1 - Funding Information:
This research was supported in part by the SyNAPSE program of the Defense Advanced Research Projects Agency under contract HR0011-09-3-0001. The views, opinions, and/or findings contained in this article are those of the authors and should not be interpreted as representing the official views or policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the Department of Defense. The authors gratefully acknowledge technical assistance of D.A.A. Ohlberg.
PY - 2012/4
Y1 - 2012/4
N2 - We characterized the conduction mechanisms in thin sputtered films of three representative binary Me-O (Me=Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behavior following an oxidation-induced transition from metallic to hopping conduction, down to a sub-percolation threshold. The electron localization estimated from the band structure was in good agreement with that from the transport measurements, and the two were used to construct phase diagrams of conduction in the degree of oxidation-conductivity coordinates, which should prove important in the design of resistive switching and other electronic devices.
AB - We characterized the conduction mechanisms in thin sputtered films of three representative binary Me-O (Me=Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behavior following an oxidation-induced transition from metallic to hopping conduction, down to a sub-percolation threshold. The electron localization estimated from the band structure was in good agreement with that from the transport measurements, and the two were used to construct phase diagrams of conduction in the degree of oxidation-conductivity coordinates, which should prove important in the design of resistive switching and other electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84862816981&partnerID=8YFLogxK
U2 - 10.1007/s00339-012-6856-z
DO - 10.1007/s00339-012-6856-z
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:84862816981
SN - 0947-8396
VL - 107
SP - 1
EP - 11
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 1
ER -
