Electronic properties of metal/sol-gel SiO2/indium-phosphode capacitor

Y. Shacham-Diamand; N. Moriya; G. Bahir

doi:10.1063/1.104295

Electronic properties of metal/sol-gel SiO₂/indium-phosphode capacitor

Y. Shacham-Diamand^*, N. Moriya, G. Bahir

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This work reports on the electrical properties of metal-oxide-semiconductor (MOS) capacitors made with a spin-on-glass (SOG) SiO₂ layer, doped with 2% phosphorus, deposited on InP substrate by spin casting followed by a low-temperature (<260°C) anneal. The capacitance versus voltage behavior as well as the dielectric constant of the SOG layer was analyzed as a function of the frequency. The stability of the relevant parameters was checked after a long period of time (four weeks), compared with fresh devices, and revealed a significant increase in the dielectric constant and a slight increase in the leakage current. It is shown that the use of SOG as the dielectric material in the MOS structure leads to a relatively low fixed charge (less than 2×10¹¹ cm^-2) and low fast state concentration.

Original language	English
Pages (from-to)	1314-1316
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	12
DOIs	https://doi.org/10.1063/1.104295
State	Published - 1991
Externally published	Yes

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@article{58a19c54ae364d3ebdfff416d0fdf3fb,

title = "Electronic properties of metal/sol-gel SiO2/indium-phosphode capacitor",

abstract = "This work reports on the electrical properties of metal-oxide-semiconductor (MOS) capacitors made with a spin-on-glass (SOG) SiO2 layer, doped with 2% phosphorus, deposited on InP substrate by spin casting followed by a low-temperature (<260°C) anneal. The capacitance versus voltage behavior as well as the dielectric constant of the SOG layer was analyzed as a function of the frequency. The stability of the relevant parameters was checked after a long period of time (four weeks), compared with fresh devices, and revealed a significant increase in the dielectric constant and a slight increase in the leakage current. It is shown that the use of SOG as the dielectric material in the MOS structure leads to a relatively low fixed charge (less than 2×1011 cm-2) and low fast state concentration.",

author = "Y. Shacham-Diamand and N. Moriya and G. Bahir",

year = "1991",

doi = "10.1063/1.104295",

language = "אנגלית",

volume = "58",

pages = "1314--1316",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Electronic properties of metal/sol-gel SiO2/indium-phosphode capacitor

AU - Shacham-Diamand, Y.

AU - Moriya, N.

AU - Bahir, G.

PY - 1991

Y1 - 1991

N2 - This work reports on the electrical properties of metal-oxide-semiconductor (MOS) capacitors made with a spin-on-glass (SOG) SiO2 layer, doped with 2% phosphorus, deposited on InP substrate by spin casting followed by a low-temperature (<260°C) anneal. The capacitance versus voltage behavior as well as the dielectric constant of the SOG layer was analyzed as a function of the frequency. The stability of the relevant parameters was checked after a long period of time (four weeks), compared with fresh devices, and revealed a significant increase in the dielectric constant and a slight increase in the leakage current. It is shown that the use of SOG as the dielectric material in the MOS structure leads to a relatively low fixed charge (less than 2×1011 cm-2) and low fast state concentration.

AB - This work reports on the electrical properties of metal-oxide-semiconductor (MOS) capacitors made with a spin-on-glass (SOG) SiO2 layer, doped with 2% phosphorus, deposited on InP substrate by spin casting followed by a low-temperature (<260°C) anneal. The capacitance versus voltage behavior as well as the dielectric constant of the SOG layer was analyzed as a function of the frequency. The stability of the relevant parameters was checked after a long period of time (four weeks), compared with fresh devices, and revealed a significant increase in the dielectric constant and a slight increase in the leakage current. It is shown that the use of SOG as the dielectric material in the MOS structure leads to a relatively low fixed charge (less than 2×1011 cm-2) and low fast state concentration.

UR - http://www.scopus.com/inward/record.url?scp=0038688246&partnerID=8YFLogxK

U2 - 10.1063/1.104295

DO - 10.1063/1.104295

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0038688246

SN - 0003-6951

VL - 58

SP - 1314

EP - 1316

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Electronic properties of metal/sol-gel SiO₂/indium-phosphode capacitor

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