Electronic properties of grain boundaries in Cu(In,Ga)Se 2 thin films with various Ga-contents

Robert Baier*, Jascha Lehmann, Sebastian Lehmann, Thorsten Rissom, Christian Alexander Kaufmann, Alex Schwarzmann, Yossi Rosenwaks, Martha Ch Lux-Steiner, Sascha Sadewasser

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se 2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to 114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content.

Original languageEnglish
Pages (from-to)86-92
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume103
DOIs
StatePublished - Aug 2012

Funding

FundersFunder number
Bundesministerium für Umwelt, Naturschutz und Reaktorsicherheit
Baqai Medical University0327559H

    Keywords

    • CIGSe
    • Grain boundaries
    • KPFM

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