TY - JOUR
T1 - ELECTRONIC LEVELS OF ATOMS NEAR CRYSTAL SURFACES, AND THEIR DEPENDENCE ON THE POTENTIAL DROP IN ELECTROCHEMICAL SYSTEMS.
AU - Brodskii, A. M.
AU - Urbakh, M. I.
PY - 1977
Y1 - 1977
N2 - A method is indicated for calculating the characteristics of the electronic states of atoms near crystal surfaces; it uses the formalism of quantum mechanical scattering theory. In the general case, any change in energy levels is characterized by two parameters: the displacement, LAMBDA , of the level, and its effective width, GAMMA , which during adsorption at the crystal/electrolyte interface depend on the potential drop across the Helmholtz layer. It is found how LAMBDA and GAMMA depend on the crystal's band structure and on the atomic characteristics.
AB - A method is indicated for calculating the characteristics of the electronic states of atoms near crystal surfaces; it uses the formalism of quantum mechanical scattering theory. In the general case, any change in energy levels is characterized by two parameters: the displacement, LAMBDA , of the level, and its effective width, GAMMA , which during adsorption at the crystal/electrolyte interface depend on the potential drop across the Helmholtz layer. It is found how LAMBDA and GAMMA depend on the crystal's band structure and on the atomic characteristics.
UR - https://www.scopus.com/pages/publications/0017452579
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AN - SCOPUS:0017452579
SN - 0038-5387
VL - 13
SP - 158
EP - 165
JO - Soviet electrochemistry
JF - Soviet electrochemistry
IS - 2
ER -