Electronic conduction in 'random' Al-Ge films

J. Shoshany, V. Goldner, R. Rosenbaum, M. Witcomb, D. S. McLachlan, A. Palevski, M. Karpovski, A. Gladkikh, Y. Lereah

Research output: Contribution to journalArticlepeer-review

Abstract

Electronic transport properties have been measured for 3500 Å Al-Ge films with a random microstructure. The room temperature resistivity exhibits a sharp discontinuous jump at the metal-insulator transition, allowing for the direct determination of the critical metallic fraction, φc = 8.8 vol% Al. A new procedure is described for extracting values for the zero-temperature conductivity σ(0) from the low-temperature conductivity data. When σ(0) is extrapolated to zero as a function of Al content, the value obtained for the critical aluminum fraction φc is in excellent agreement with the value obtained from the room temperature data. The films exhibit two transition regions below 1.2 K as the Al content is decreased - a transition from the superconductivity state to the normal-metallic state, followed by a second transition from the normal-metallic state to the insulating, variable-range-hopping state. Superconducting fluctuation data taken above 1.2 K were well described using the 2D Aslamazov-Larkin and Maki-Thompson formulae; the 'resistive tails' below 1.2 K are also discussed.

Original languageEnglish
Pages (from-to)1729-1742
Number of pages14
JournalJournal of Physics Condensed Matter
Volume8
Issue number11
DOIs
StatePublished - 11 Mar 1996

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