Abstract
An original approach for studying the formation of semiconductor heterojunctions and their electronic properties is discussed and illustrated. Monitoring the changes in the surface potential during the heterojunction formation lends itself to direct measurement of the band discontinuities, Debye length, and the width of the space-charge region at heterojunction interfaces. The contribution of an interface dipole is considered. The technique is demonstrated by a technologically significant experimental example.
Original language | English |
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Pages (from-to) | 893-901 |
Number of pages | 9 |
Journal | Journal of Electronic Materials |
Volume | 24 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1995 |
Keywords
- GaAs
- InO/InP
- surface photovoltage
- surface potential