Electronic characterization of heterojunctions by surface potential monitoring

L. Kronik*, M. Leibovitch, E. Fefer, V. Korobov, Yoram Shapira

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

An original approach for studying the formation of semiconductor heterojunctions and their electronic properties is discussed and illustrated. Monitoring the changes in the surface potential during the heterojunction formation lends itself to direct measurement of the band discontinuities, Debye length, and the width of the space-charge region at heterojunction interfaces. The contribution of an interface dipole is considered. The technique is demonstrated by a technologically significant experimental example.

Original languageEnglish
Pages (from-to)893-901
Number of pages9
JournalJournal of Electronic Materials
Volume24
Issue number7
DOIs
StatePublished - Jul 1995

Keywords

  • GaAs
  • InO/InP
  • surface photovoltage
  • surface potential

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