Electron transport in AlGaAs/GaAs V-groove quantum wires

B. Dwir, D. Kaufman, Y. Berk, A. Rudra, A. Palevski, E. Kapon

Research output: Contribution to journalArticlepeer-review


We fabricated modulation doped GaAs-AlGaAs V-groove heterostructures incorporating quantum wires (QWRs), using organometallic chemical vapor deposition on corrugated substrates. Electron-beam lithography was employed to isolate a single QWR and to apply Schottky gates to the QWR and to the V-groove sidewalls. We observed a two-step sequence of carrier depletion, first from the sidewalls and then from the QWR, when a progressively more negative gate voltage was applied. In the regime of QWR depletion the conductance decreases in steps which attain 90% of the quantized value 2e2/h.

Original languageEnglish
Pages (from-to)1025-1027
Number of pages3
JournalPhysica B: Condensed Matter
StatePublished - 1999


  • 1D transport
  • Quantized conductance
  • Quantum wire


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