TY - JOUR
T1 - Electron transport in AlGaAs/GaAs V-groove quantum wires
AU - Dwir, B.
AU - Kaufman, D.
AU - Berk, Y.
AU - Rudra, A.
AU - Palevski, A.
AU - Kapon, E.
N1 - Funding Information:
This work was supported by the Fond National Suisse de la Recherche Scientifique and the German-Israel Foundation.
PY - 1999
Y1 - 1999
N2 - We fabricated modulation doped GaAs-AlGaAs V-groove heterostructures incorporating quantum wires (QWRs), using organometallic chemical vapor deposition on corrugated substrates. Electron-beam lithography was employed to isolate a single QWR and to apply Schottky gates to the QWR and to the V-groove sidewalls. We observed a two-step sequence of carrier depletion, first from the sidewalls and then from the QWR, when a progressively more negative gate voltage was applied. In the regime of QWR depletion the conductance decreases in steps which attain 90% of the quantized value 2e2/h.
AB - We fabricated modulation doped GaAs-AlGaAs V-groove heterostructures incorporating quantum wires (QWRs), using organometallic chemical vapor deposition on corrugated substrates. Electron-beam lithography was employed to isolate a single QWR and to apply Schottky gates to the QWR and to the V-groove sidewalls. We observed a two-step sequence of carrier depletion, first from the sidewalls and then from the QWR, when a progressively more negative gate voltage was applied. In the regime of QWR depletion the conductance decreases in steps which attain 90% of the quantized value 2e2/h.
KW - 1D transport
KW - Quantized conductance
KW - Quantum wire
UR - http://www.scopus.com/inward/record.url?scp=9344225722&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(98)00956-9
DO - 10.1016/S0921-4526(98)00956-9
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:9344225722
VL - 259-261
SP - 1025
EP - 1027
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
ER -