Abstract
We have directly measured the excitation of electron-hole pairs at a crystal surface by ground-state neutral atoms. Utilizing seeded molecular beam techniques we have scattered hyperthermal (1-6 eV) Xe atoms from the (100) face of a Ge p-i-n diode and recorded the current transient induced due to the scattering process. We find the product of the excitation and collection probability to be ∼10-4 over a range of kinetic energies 2<EXe(eV)<6. The excitation of electron-hole pairs constitutes a small portion of the massive energy loss (ΔE/E∼70%) of the Xe atom to the crystal.
Original language | English |
---|---|
Pages (from-to) | 2213-2215 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 59 |
Issue number | 6 |
DOIs | |
State | Published - 1986 |
Externally published | Yes |