Electron-hole pair creation at a Ge(100) surface by ground-state neutral Xe atoms

A. Amirav*, W. R. Lambert, M. J. Cardillo, P. L. Trevor, P. N. Luke, E. E. Haller

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have directly measured the excitation of electron-hole pairs at a crystal surface by ground-state neutral atoms. Utilizing seeded molecular beam techniques we have scattered hyperthermal (1-6 eV) Xe atoms from the (100) face of a Ge p-i-n diode and recorded the current transient induced due to the scattering process. We find the product of the excitation and collection probability to be ∼10-4 over a range of kinetic energies 2<EXe(eV)<6. The excitation of electron-hole pairs constitutes a small portion of the massive energy loss (ΔE/E∼70%) of the Xe atom to the crystal.

Original languageEnglish
Pages (from-to)2213-2215
Number of pages3
JournalJournal of Applied Physics
Volume59
Issue number6
DOIs
StatePublished - 1986
Externally publishedYes

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