Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers

Sushrut Modak; Leonid Chernyak; Alfons Schulte; Minghan Xian; Fan Ren; Stephen J. Pearton; Igor Lubomirsky; Arie Ruzin; Sergey S. Kosolobov; Vladimir P. Drachev

doi:10.1063/5.0052601

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Igor Lubomirsky, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	118
Issue number	20
DOIs	https://doi.org/10.1063/5.0052601
State	Published - 17 May 2021

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Modak, S., Chernyak, L., Schulte, A., Xian, M., Ren, F., Pearton, S. J., Lubomirsky, I., Ruzin, A., Kosolobov, S. S., & Drachev, V. P. (2021). Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers. Applied Physics Letters, 118(20), [202105]. https://doi.org/10.1063/5.0052601

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title = "Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers",

abstract = "Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.",

author = "Sushrut Modak and Leonid Chernyak and Alfons Schulte and Minghan Xian and Fan Ren and Pearton, {Stephen J.} and Igor Lubomirsky and Arie Ruzin and Kosolobov, {Sergey S.} and Drachev, {Vladimir P.}",

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year = "2021",

month = may,

day = "17",

doi = "10.1063/5.0052601",

language = "אנגלית",

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T1 - Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Schulte, Alfons

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Kosolobov, Sergey S.

AU - Drachev, Vladimir P.

PY - 2021/5/17

Y1 - 2021/5/17

N2 - Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

AB - Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

UR - http://www.scopus.com/inward/record.url?scp=85106198252&partnerID=8YFLogxK

U2 - 10.1063/5.0052601

DO - 10.1063/5.0052601

M3 - מאמר

AN - SCOPUS:85106198252

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202105

ER -

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers

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