Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers

Sushrut Modak; Leonid Chernyak; Alfons Schulte; Minghan Xian; Fan Ren; Stephen J. Pearton; Igor Lubomirsky; Arie Ruzin; Sergey S. Kosolobov; Vladimir P. Drachev

doi:10.1063/5.0052601

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers

Sushrut Modak, Leonid Chernyak^*, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Igor Lubomirsky, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	118
Issue number	20
DOIs	https://doi.org/10.1063/5.0052601
State	Published - 17 May 2021

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10.1063/5.0052601

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Modak, S., Chernyak, L., Schulte, A., Xian, M., Ren, F., Pearton, S. J., Lubomirsky, I., Ruzin, A., Kosolobov, S. S., & Drachev, V. P. (2021). Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers. Applied Physics Letters, 118(20), Article 202105. https://doi.org/10.1063/5.0052601

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title = "Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers",

abstract = "Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.",

author = "Sushrut Modak and Leonid Chernyak and Alfons Schulte and Minghan Xian and Fan Ren and Pearton, {Stephen J.} and Igor Lubomirsky and Arie Ruzin and Kosolobov, {Sergey S.} and Drachev, {Vladimir P.}",

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year = "2021",

month = may,

day = "17",

doi = "10.1063/5.0052601",

language = "אנגלית",

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T1 - Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Schulte, Alfons

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Kosolobov, Sergey S.

AU - Drachev, Vladimir P.

PY - 2021/5/17

Y1 - 2021/5/17

N2 - Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

AB - Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

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DO - 10.1063/5.0052601

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SN - 0003-6951

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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ER -

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers

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