Abstract
Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.
Original language | English |
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Article number | 202105 |
Journal | Applied Physics Letters |
Volume | 118 |
Issue number | 20 |
DOIs | |
State | Published - 17 May 2021 |