Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Igor Lubomirsky, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

Research output: Contribution to journalArticlepeer-review

Abstract

Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

Original languageEnglish
Article number202105
JournalApplied Physics Letters
Volume118
Issue number20
DOIs
StatePublished - 17 May 2021

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