Electron beam induced dissociation and conductivity of SnO2 films

Yoram Shapira*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The effect of electron bombardment on rf-sputtered SnO2 films was studied using mass spectrometry, Auger electron spectroscopy, and conductivity measurements. The studies show that the electron beam causes surface dissociation and subsequent desorption of atomic oxygen. The dissociation is accompanied by corresponding increase of film conductivity, which persists in ultrahigh vacuum conditions and can eliminated by O 2 introduction. A model of the correlated processes is suggested.

Original languageEnglish
Pages (from-to)5696-5698
Number of pages3
JournalJournal of Applied Physics
Issue number9
StatePublished - 1981


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