Electromigration of intergranular voids in metal films for microelectronic interconnects

Keyphrases

• Boundary Element Method 50%
• Diffusion Model 50%
• Electric Field Force 50%
• Electromigration 100%
• External Voltage 50%
• Fatal Failure 50%
• Finite Difference Scheme 50%
• Fourth Order 50%
• Grain Interior 50%
• Integration Scheme 50%
• Interconnect Line 50%
• Interface Line 50%
• Laplace Equation 50%
• Metal Film 100%
• Micro Interconnect 100%
• Microelectronics 50%
• Runge-Kutta Integration 50%
• Single Grain 50%
• Static Problem 50%
• Surface Diffusion 50%
• Time-dependent PDEs 50%
• Triple Point 50%
• Two Dimensional 50%
• Voltage Distribution 100%

Engineering

• Applied Voltage 33%
• Boundary Condition 33%
• Boundary Element Method 33%
• Diffusion Model 33%
• Discretization 33%
• Electric Field 33%
• Electromigration 100%
• Fourth Order 33%
• Grain Interior 33%
• Initial Configuration 33%
• Interconnects 100%
• Laplace Equation 33%
• Microelectronics 100%
• Neighboring Grain 33%
• One Dimensional 66%
• Partial Differential Equation 33%
• Single Grain 33%
• Static Problem 33%
• Triple Point 33%
• Two Dimensional 33%

Material Science

• Boundary Element Method 100%
• Electronic Circuit 100%
• Finite Difference Method 100%
• Metal Film 100%
• Surface Diffusion 100%