Electromigration kinetics in thin film interconnects: Electro-transport coupled to diffusional creep

E. E. Glickman*, M. Nathan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Modeling supported by experimental observations suggests that in short, near-threshold thin metal film interconnects, there is a transition from electrotransport - to creep-controlled drift velocity electromigration. In this regime, the creep viscosity emerges as the major material property that determines EM kinetics. This suggests a paradigm shift in the analysis of electromigration in short advanced interconnects. A model that relates the viscosity to the mechanism of stress relaxation by hillocks is proposed. Favored by the smallness of all macroscopic dimensions, the transition to the reaction controlled regime is expected to be a characteristic feature of all migration processes in microelectronic thin films.

Original languageEnglish
Pages (from-to)1417-1430
Number of pages14
JournalDefect and Diffusion Forum
Issue number194-199 PART 2
DOIs
StatePublished - 2001

Keywords

  • Diffusional Creep
  • Drift Velocity Electromigration
  • Hillocks
  • Kinetics and Threshold
  • Short Stripe Effect
  • Stress Build-up and Relaxation
  • Viscosity

Fingerprint

Dive into the research topics of 'Electromigration kinetics in thin film interconnects: Electro-transport coupled to diffusional creep'. Together they form a unique fingerprint.

Cite this