TY - JOUR
T1 - Electroless silver and silver with tungsten thin films for microelectronics and microelectromechanical system applications
AU - Shacham-Diamand, Yosi
AU - Inberg, Alexandra
AU - Sverdlov, Yelena
AU - Croitoru, Nathan
PY - 2000/9
Y1 - 2000/9
N2 - In this study we present the results of electroless deposition of silver (Ag) and silver tungsten [Ag(W)] layers on Si, intended for application in microelectronics and microelectromechanical systems (MEMS) technology. Silver has excellent resistivity but its thin-film properties and its vulnerability to corrosion may cause a problem. In this work we present a novel Ag(W) type of layer that has improved thin-film properties, such as resistivity and surface roughness, and can serve as both barrier layer and capping layer for corrosion protection of the Ag thin films. The thin-film composition was studied as a function of the deposition parameters. We found the presence of tungsten, up to 3.1 atom %, and oxygen, up to 8 atom %, in addition to the silver atoms. We also studied the thin-film morphology using atomic force microscopy and scanning tunneling microscopy imaging of the surface after each process step. Finally, we discuss the possible mechanisms for the deposition of Ag(W).
AB - In this study we present the results of electroless deposition of silver (Ag) and silver tungsten [Ag(W)] layers on Si, intended for application in microelectronics and microelectromechanical systems (MEMS) technology. Silver has excellent resistivity but its thin-film properties and its vulnerability to corrosion may cause a problem. In this work we present a novel Ag(W) type of layer that has improved thin-film properties, such as resistivity and surface roughness, and can serve as both barrier layer and capping layer for corrosion protection of the Ag thin films. The thin-film composition was studied as a function of the deposition parameters. We found the presence of tungsten, up to 3.1 atom %, and oxygen, up to 8 atom %, in addition to the silver atoms. We also studied the thin-film morphology using atomic force microscopy and scanning tunneling microscopy imaging of the surface after each process step. Finally, we discuss the possible mechanisms for the deposition of Ag(W).
UR - http://www.scopus.com/inward/record.url?scp=0034272509&partnerID=8YFLogxK
U2 - 10.1149/1.1393904
DO - 10.1149/1.1393904
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AN - SCOPUS:0034272509
SN - 0013-4651
VL - 147
SP - 3345
EP - 3349
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 9
ER -