Electroless deposition of novel Ag-W thin films

V. Bogush, A. Inberg, N. Croitoru, V. Dubin, Y. Shacham-Diamand

Research output: Contribution to journalConference articlepeer-review


The seedless electroless deposition of silver-tungsten (Ag-W) thin films on silicon dioxide substrate was performed using wet palladium activation from ammonia-acetate and benzoate solutions. Introducing tungsten in the plating bath catalyzes the deposition for benzoic acid solution and decreases the deposition rate for ammonia-acetate solution. The tungsten content in the deposit was 0-1.0 at%, mainly in WOx form. It was found that the electrical, optical, and mechanical properties of the Ag-W films depends on the W content in the deposit. The optimal Ag-W thin films that were deposited from either the ammonia-acetate or benzoate bath demonstrate good adhesion to the substrate, high brightness, and do not corrode at temperatures up to 350 °C in air. Sub-100 nm thick Ag-W deposits have demonstrated resistivity of about 4 μΩcm after vacuum annealing at 350 °C for 1 h. Finally, we present the film microstructure characterization and discuss the possibility of using Ag-W thin films for advanced microelectronics metallization.

Original languageEnglish
Pages (from-to)489-494
Number of pages6
JournalMicroelectronic Engineering
Issue number2-4
StatePublished - Nov 2003
EventMaterials for Advanced Metallization 2003 - La Londe Les Maures, France
Duration: 9 Mar 200312 Mar 2003


  • Electroless deposition
  • Silver
  • Thin film
  • Tungsten


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