TY - JOUR
T1 - Electroless deposition of novel Ag-W thin films
AU - Bogush, V.
AU - Inberg, A.
AU - Croitoru, N.
AU - Dubin, V.
AU - Shacham-Diamand, Y.
N1 - Funding Information:
The authors would like to thank the Semiconductor Research Corporation for support of this research (contract 2001-MJ-944). We also thank Dr. Larisa Burschstein and Dr. Zahava Barkay from the Wolfson Material Center at Tel-Aviv University.
PY - 2003/11
Y1 - 2003/11
N2 - The seedless electroless deposition of silver-tungsten (Ag-W) thin films on silicon dioxide substrate was performed using wet palladium activation from ammonia-acetate and benzoate solutions. Introducing tungsten in the plating bath catalyzes the deposition for benzoic acid solution and decreases the deposition rate for ammonia-acetate solution. The tungsten content in the deposit was 0-1.0 at%, mainly in WOx form. It was found that the electrical, optical, and mechanical properties of the Ag-W films depends on the W content in the deposit. The optimal Ag-W thin films that were deposited from either the ammonia-acetate or benzoate bath demonstrate good adhesion to the substrate, high brightness, and do not corrode at temperatures up to 350 °C in air. Sub-100 nm thick Ag-W deposits have demonstrated resistivity of about 4 μΩcm after vacuum annealing at 350 °C for 1 h. Finally, we present the film microstructure characterization and discuss the possibility of using Ag-W thin films for advanced microelectronics metallization.
AB - The seedless electroless deposition of silver-tungsten (Ag-W) thin films on silicon dioxide substrate was performed using wet palladium activation from ammonia-acetate and benzoate solutions. Introducing tungsten in the plating bath catalyzes the deposition for benzoic acid solution and decreases the deposition rate for ammonia-acetate solution. The tungsten content in the deposit was 0-1.0 at%, mainly in WOx form. It was found that the electrical, optical, and mechanical properties of the Ag-W films depends on the W content in the deposit. The optimal Ag-W thin films that were deposited from either the ammonia-acetate or benzoate bath demonstrate good adhesion to the substrate, high brightness, and do not corrode at temperatures up to 350 °C in air. Sub-100 nm thick Ag-W deposits have demonstrated resistivity of about 4 μΩcm after vacuum annealing at 350 °C for 1 h. Finally, we present the film microstructure characterization and discuss the possibility of using Ag-W thin films for advanced microelectronics metallization.
KW - Electroless deposition
KW - Silver
KW - Thin film
KW - Tungsten
UR - http://www.scopus.com/inward/record.url?scp=0142106886&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(03)00414-3
DO - 10.1016/S0167-9317(03)00414-3
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AN - SCOPUS:0142106886
SN - 0167-9317
VL - 70
SP - 489
EP - 494
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 2-4
T2 - Materials for Advanced Metallization 2003
Y2 - 9 March 2003 through 12 March 2003
ER -