TY - GEN
T1 - Electroless deposition of CoMoP and CoMoB alloy thin films
AU - Shklovsky, Y. Sverdlov J.
AU - Shacham-Diamand, Y.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - CoMoP and CoMoB alloys was produced using a simple modification of the commonly used CoP bath. The proposed process is similar to that of electroless CoWP, which have been demonstrated from an electrolyte with sodium tungstate (Na2WO4) or tungsten phosphoric acid (H3[P(W3O10)4]) as a source of the W-ions. In this paper we demonstrate a Co-Mo-P (or B) electroless deposition bath using either cobalt-sulfate and cobalt-dichloride bath under basic conditions (pH-9 for the phosphorous alloy and 12-14 for the boron alloy) using sodium hypophosphite or sodium borohydride as the reducing agents. The refractory metal was introduced to the solutions by adding molybdate ions. The material and electrical properties of the obtained films were characterized and presented here. The deposition process presented here are compatible with microelectronics microfabrication process; thus they can be applied for microelectronics, micro electrical systems (MEMS) or packaging; however their barrier and capping properties for copper metallization are yet to be determined.
AB - CoMoP and CoMoB alloys was produced using a simple modification of the commonly used CoP bath. The proposed process is similar to that of electroless CoWP, which have been demonstrated from an electrolyte with sodium tungstate (Na2WO4) or tungsten phosphoric acid (H3[P(W3O10)4]) as a source of the W-ions. In this paper we demonstrate a Co-Mo-P (or B) electroless deposition bath using either cobalt-sulfate and cobalt-dichloride bath under basic conditions (pH-9 for the phosphorous alloy and 12-14 for the boron alloy) using sodium hypophosphite or sodium borohydride as the reducing agents. The refractory metal was introduced to the solutions by adding molybdate ions. The material and electrical properties of the obtained films were characterized and presented here. The deposition process presented here are compatible with microelectronics microfabrication process; thus they can be applied for microelectronics, micro electrical systems (MEMS) or packaging; however their barrier and capping properties for copper metallization are yet to be determined.
UR - http://www.scopus.com/inward/record.url?scp=85025474601&partnerID=8YFLogxK
U2 - 10.1149/07534.0067ecst
DO - 10.1149/07534.0067ecst
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AN - SCOPUS:85025474601
T3 - ECS Transactions
SP - 67
EP - 76
BT - Electroless Deposition
A2 - Djokic, S.
A2 - Magagnin, L.
A2 - Homma, T.
A2 - Yoshihara, S.
PB - Electrochemical Society Inc.
T2 - Symposium on Electroless Deposition: Principles and Applications 4: In Honor of Milan Paunovic and Mordechay Schlesinger - PRiME 2016/230th ECS Meeting
Y2 - 2 October 2016 through 7 October 2016
ER -