CoMoP and CoMoB alloys was produced using a simple modification of the commonly used CoP bath. The proposed process is similar to that of electroless CoWP, which have been demonstrated from an electrolyte with sodium tungstate (Na2WO4) or tungsten phosphoric acid (H3[P(W3O10)4]) as a source of the W-ions. In this paper we demonstrate a Co-Mo-P (or B) electroless deposition bath using either cobalt-sulfate and cobalt-dichloride bath under basic conditions (pH-9 for the phosphorous alloy and 12-14 for the boron alloy) using sodium hypophosphite or sodium borohydride as the reducing agents. The refractory metal was introduced to the solutions by adding molybdate ions. The material and electrical properties of the obtained films were characterized and presented here. The deposition process presented here are compatible with microelectronics microfabrication process; thus they can be applied for microelectronics, micro electrical systems (MEMS) or packaging; however their barrier and capping properties for copper metallization are yet to be determined.