Electroless deposition and electrical resistivity of sub-100 nm Cu films on SAMs: State of the art

E. Glickman, A. Inberg, N. Fishelson, Y. Shaham-Diamand

Research output: Contribution to journalArticlepeer-review

Abstract

Self-assembled organic monolayers (SAMs) of silanes with -SH, -NH2 and -C5H4N functional groups have been shown recently to act as ultra-thin, robust diffusion barriers at the Cu/SiO2 and Cu/ultra low-k dielectric interfaces. More generally, SAMs with their tunable surface chemistry are essential elements of future all-wet ULSI metallization with Cu deposited by electroless (ELD) over SAM-functionalized dielectrics. Far too small is known however on the electrical properties of thin metal films formed onto SAM/dielectric substrates. In this paper, we give first a brief literature survey of what is known about Cu films deposited by electroless over dielectrics modified by SAMs. Second, we present our observations of electrical resistivity ρ of sub-100 nm ELD Cu films deposited over the surface of amino-silane SAM/SiO2 activated by Au monodispersed nano-particles and show that this techniques helps to obtain considerably smaller ρ compared to the previously reported data.

Original languageEnglish
Pages (from-to)2466-2470
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number11
DOIs
StatePublished - Nov 2007

Keywords

  • Adhesion
  • Cu films
  • Diffusion barriers
  • Electroless deposition
  • NH group Au nano-particles
  • Resistivity
  • Self-assembling monolayers
  • Silanization
  • Surface activation

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