Electroless Cu and barrier layers for sub-half micron multilevel interconnects

Keyphrases

• Electroless Cu 100%
• Cu Layer 100%
• Barrier Layer 100%
• CoWP 100%
• Silicide Formation 50%
• Aspect Ratio 25%
• Oxides 25%
• Electroless 25%
• Electroless Deposition 25%
• Electroless Ni 25%
• Cu Interconnect 25%
• Seed Layer 25%
• Cu Line 25%
• Pd Activation 25%
• Cu Oxidation 25%
• Cu Corrosion 25%
• Cu Surface 25%
• Cu-Co Alloy 25%
• Electroless Cu Deposition 25%
• Damascene Process 25%
• Chemical Mechanical Polishing 25%
• Electroless Ni-P 25%
• Multilevel Metallization 25%
• Local Interconnect 25%
• Cu-Ni Alloy 25%
• Deep Trench 25%

Engineering

• Interconnects 100%
• Barrier Layer 100%
• Metallizations 33%
• Aspect Ratio 33%
• Ni Alloy 33%
• Seed Layer 33%
• Cu Surface 33%
• Damascene Process 33%
• Chemical Mechanical Polishing 33%

Chemical Engineering

• Silicide 100%
• Electroless Plating 50%
• Metallizing 50%