Electroless Co(W,P) and Co(Mo,P) deposition for Cu metallization applications

Y. Shacham-Diamand, A. Zylberman, N. Petrov, Y. Sverdlov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The barrier properties against Cu diffusion of thin-film (< 30 nm) Co(P) alloys are significantly improved when tungsten is added. It is not known whether the barrier properties are due to tungsten or any other refractory metal will have a similar effect. In this work we present a novel electroless cobalt-molybdenum-phosphorous Co(Mo,P) process. Both Co(W,P) and Co(Mo,P) deposition solutions were studied and we present their characteristics such as deposition rate and solid composition. We also present the thin film resistivity and show that the Mo alloy resistivity is higher than that of the W alloy. Auger electron Spectroscopy (AES) and X-ray Photon Spectroscopy (XPS) determined the film composition. The corrosion resistance of Co alloy/Cu/Co-alloy structures were studied by measuring the thin film resistance versus time at elevated temperatures, up to 350°C. We conclude that both W and Mo alloy have similar barrier and corrosion protection priorities. Therefore, the improved barrier properties, as compared to Co(P) alloy is due the refractory metal and not specific to W.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages410-415
Number of pages6
ISBN (Electronic)0780365208, 9780780365209
DOIs
StatePublished - 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 22 Oct 200125 Oct 2001

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume1

Conference

Conference6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/TerritoryChina
CityShanghai
Period22/10/0125/10/01

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