TY - JOUR
T1 - Electroless Co(Mo, P) films for Cu interconnect application
AU - Shacham-Diamand, Y.
AU - Zylberman, A.
AU - Petrov, N.
AU - Sverdlov, Y.
N1 - Funding Information:
The work was partially funded by grant #8460-1-00 from the Israeli Ministry of Science. We wish to thank Dr Roi Shaviv from Novellus Inc. and Dr Larisa Burschstein from the Wolfson Material Center at Tel-Aviv University for their encouragement and assistance.
PY - 2002/10
Y1 - 2002/10
N2 - Thin cobalt-molybdenum-phosphorous, Co(Mo, P), films, prepared by electroless deposition, have been studied for barrier and capping layers for copper metallization for ULSI applications. The solutions and the deposition conditions for the preparation of Co(Mo, P) on various seed layers are presented. The material properties of Cu layers with Co(Mo, P) barrier and capping layers, annealed at temperatures up to 350 °C, were studied by Auger electron spectroscopy (AES) and X-ray photo-emission spectroscopy (XPS). Measuring the resistance of the samples versus time allowed us to study the kinetics of the thin film oxidation. Composition profiling showed that if there is copper diffusion onto either the top capping layer or the bottom barrier layer, it was below the AES system detection level (∼0.1%). We conclude that the novel Co(Mo, P) can be used as a barrier against copper diffusion and as an oxidation protection layer.
AB - Thin cobalt-molybdenum-phosphorous, Co(Mo, P), films, prepared by electroless deposition, have been studied for barrier and capping layers for copper metallization for ULSI applications. The solutions and the deposition conditions for the preparation of Co(Mo, P) on various seed layers are presented. The material properties of Cu layers with Co(Mo, P) barrier and capping layers, annealed at temperatures up to 350 °C, were studied by Auger electron spectroscopy (AES) and X-ray photo-emission spectroscopy (XPS). Measuring the resistance of the samples versus time allowed us to study the kinetics of the thin film oxidation. Composition profiling showed that if there is copper diffusion onto either the top capping layer or the bottom barrier layer, it was below the AES system detection level (∼0.1%). We conclude that the novel Co(Mo, P) can be used as a barrier against copper diffusion and as an oxidation protection layer.
KW - Barrier layers
KW - Copper metallization
KW - Electroless deposition
UR - http://www.scopus.com/inward/record.url?scp=0036776517&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(02)00804-3
DO - 10.1016/S0167-9317(02)00804-3
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AN - SCOPUS:0036776517
SN - 0167-9317
VL - 64
SP - 315
EP - 320
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
ER -