TY - JOUR
T1 - Electrochemical and material study of electroless ternary barriers for copper interconnects
AU - Lopatin, S.
AU - Kim, Y.
AU - Shacham-Diamand, Y.
PY - 1998
Y1 - 1998
N2 - Electroless cobalt-rich CoWP ternary alloys with a low weight percent of tungsten (approx. 2 percent) and a high phosphorus content (approx. 11 weight percent) have been deposited in basic solution onto copper and cobalt in integrated Cu damascene structures. A capability of the electroless CoWP deposition to form conformal barrier/protection films was demonstrated. Conformal 10 nm thick CoWP layer was also formed on the sidewalls of 30-40 nm wide seam of aspect ratio about 5:1 on the top of 0.4 μm wide in-laid Cu line.
AB - Electroless cobalt-rich CoWP ternary alloys with a low weight percent of tungsten (approx. 2 percent) and a high phosphorus content (approx. 11 weight percent) have been deposited in basic solution onto copper and cobalt in integrated Cu damascene structures. A capability of the electroless CoWP deposition to form conformal barrier/protection films was demonstrated. Conformal 10 nm thick CoWP layer was also formed on the sidewalls of 30-40 nm wide seam of aspect ratio about 5:1 on the top of 0.4 μm wide in-laid Cu line.
UR - http://www.scopus.com/inward/record.url?scp=0032300333&partnerID=8YFLogxK
U2 - 10.1557/proc-514-433
DO - 10.1557/proc-514-433
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AN - SCOPUS:0032300333
SN - 0272-9172
VL - 514
SP - 433
EP - 438
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1998 MRS Spring Symposium
Y2 - 13 April 1998 through 17 April 1998
ER -