TY - JOUR
T1 - Electrical resistivity of thin electroless Ag-W films for metallization
AU - Glickman, E. E.
AU - Bogush, V.
AU - Inberg, A.
AU - Shacham-Diamand, Y.
AU - Croitoru, N.
N1 - Funding Information:
Drs. Z. Barkay, L. Burstein, A. Gladkich, and Y. Rosenberg from the Wolfson Material Center at Tel-Aviv University are gratefully acknowledged for their help in material characterization. Authors also would like to thank the Semiconductor Research Corporation for financial support of this research (Contract 2001-MJ-944).
PY - 2003/11
Y1 - 2003/11
N2 - The electrical resistivity of thin electroless silver tungsten (Ag-W) films for metallization was discussed. The optimization of electroless deposition and the use of vacuum annealing yield decreased in the resistivity and its scatter in 100- and 50-nm Ag-W films. The physical processes which controlled the resistivity drop during low-temperature annealing were also discussed.
AB - The electrical resistivity of thin electroless silver tungsten (Ag-W) films for metallization was discussed. The optimization of electroless deposition and the use of vacuum annealing yield decreased in the resistivity and its scatter in 100- and 50-nm Ag-W films. The physical processes which controlled the resistivity drop during low-temperature annealing were also discussed.
KW - Electrical resistivity
KW - Metallization
KW - Thin electroless Ag-W films
UR - http://www.scopus.com/inward/record.url?scp=0142106885&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(03)00423-4
DO - 10.1016/S0167-9317(03)00423-4
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AN - SCOPUS:0142106885
SN - 0167-9317
VL - 70
SP - 495
EP - 500
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 2-4
T2 - Materials for Advanced Metallization 2003
Y2 - 9 March 2003 through 12 March 2003
ER -