Electrical resistivity of thin electroless Ag-W films for metallization

E. E. Glickman*, V. Bogush, A. Inberg, Y. Shacham-Diamand, N. Croitoru

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations

Abstract

The electrical resistivity of thin electroless silver tungsten (Ag-W) films for metallization was discussed. The optimization of electroless deposition and the use of vacuum annealing yield decreased in the resistivity and its scatter in 100- and 50-nm Ag-W films. The physical processes which controlled the resistivity drop during low-temperature annealing were also discussed.

Original languageEnglish
Pages (from-to)495-500
Number of pages6
JournalMicroelectronic Engineering
Volume70
Issue number2-4
DOIs
StatePublished - Nov 2003
EventMaterials for Advanced Metallization 2003 - La Londe Les Maures, France
Duration: 9 Mar 200312 Mar 2003

Funding

FundersFunder number
Semiconductor Research Corporation2001-MJ-944

    Keywords

    • Electrical resistivity
    • Metallization
    • Thin electroless Ag-W films

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