@article{699dc10023794707a15c88281b495907,
title = "Electrical properties of sub-100 nm Cu films deposited by electroless plating on amino-terminated silicon oxide activated with Au nano-particles",
abstract = "Self-assembled organic monolayers (SAMs) are good coupling agents and diffusion barriers at Cu/SiO2 and Cu/low-k interfaces and are considered therefore as important elements of future all-wet ULSI metallization with sub-45 nm Cu deposited by electroless plating (ELD). We formed SAM of 3-aminopropyltrimethoxy silane (APTMS) onto SiO2/Si substrate, activated the surface of APTMS with 5, 8, 15 and 25 nm Au nano-particles (AuNPs), deposited (30-100) nm films of Cu by ELD and measured electrical resistivity ρ of the films in the as-deposited state and after vacuum annealing at 220 C. The size of AuNPs was found to be a key factor in getting low resistance sub-100 nm Cu films by ELD. The resistivity ρ ≈ 4 ± 0.8 μΩ·cm - considerably smaller compared to the previously reported data - was achieved with the use of 5 nm AuNPs. XPS and AFM revealed nano-pores, which can contribute to ρ but do not compromise likely the diffusion barrier properties of the SAM.",
keywords = "Au nano-particles, Cu films, Electroless deposition, Resistivity, SAM, Surface activation",
author = "A. Inberg and E. Glickman and T. Asher and N. Fishelson and Y. Shacham-Diamand",
note = "Funding Information: This work was partly supported by Intel Corporation (Israel) through contract # 0605214601 .We are grateful to Drs. L. Burstein and Z. Barkay from the Wolfson Applied Materials Research Center and Mr. I. Torchinsky from Department of Physical Electronics of Tel-Aviv University for their help in material characterization. ",
year = "2009",
month = nov,
day = "15",
doi = "10.1016/j.surfcoat.2009.08.028",
language = "אנגלית",
volume = "204",
pages = "520--524",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier B.V.",
number = "4",
}