Electrical properties of sub-100 nm Cu films deposited by electroless plating on amino-terminated silicon oxide activated with Au nano-particles

A. Inberg*, E. Glickman, T. Asher, N. Fishelson, Y. Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Self-assembled organic monolayers (SAMs) are good coupling agents and diffusion barriers at Cu/SiO2 and Cu/low-k interfaces and are considered therefore as important elements of future all-wet ULSI metallization with sub-45 nm Cu deposited by electroless plating (ELD). We formed SAM of 3-aminopropyltrimethoxy silane (APTMS) onto SiO2/Si substrate, activated the surface of APTMS with 5, 8, 15 and 25 nm Au nano-particles (AuNPs), deposited (30-100) nm films of Cu by ELD and measured electrical resistivity ρ of the films in the as-deposited state and after vacuum annealing at 220 C. The size of AuNPs was found to be a key factor in getting low resistance sub-100 nm Cu films by ELD. The resistivity ρ ≈ 4 ± 0.8 μΩ·cm - considerably smaller compared to the previously reported data - was achieved with the use of 5 nm AuNPs. XPS and AFM revealed nano-pores, which can contribute to ρ but do not compromise likely the diffusion barrier properties of the SAM.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalSurface and Coatings Technology
Volume204
Issue number4
DOIs
StatePublished - 15 Nov 2009

Keywords

  • Au nano-particles
  • Cu films
  • Electroless deposition
  • Resistivity
  • SAM
  • Surface activation

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