TY - JOUR
T1 - Electrical measurements of structural defects in Cd0.9Zn 0.1Te by atomic force microscopy based methods
AU - Ruzin, Arie
AU - Torchinski, I.
AU - Goldfarb, I.
PY - 2004/5
Y1 - 2004/5
N2 - Bridgman grown, single crystal Cd0.9Zn0.1Te samples of non-spectroscopy grade material were investigated with nano-scale resolution by AFM based surface potential difference, electric force microscopy and tunnelling current methods. The results, confirmed by SEM characterization, indicate the presence of large, electrically charged structural defects. The defects are thought to be extended faults, creating significant variations in the surface band bending on the polished and etched crystal surface, and conductive channels in the bulk.
AB - Bridgman grown, single crystal Cd0.9Zn0.1Te samples of non-spectroscopy grade material were investigated with nano-scale resolution by AFM based surface potential difference, electric force microscopy and tunnelling current methods. The results, confirmed by SEM characterization, indicate the presence of large, electrically charged structural defects. The defects are thought to be extended faults, creating significant variations in the surface band bending on the polished and etched crystal surface, and conductive channels in the bulk.
UR - http://www.scopus.com/inward/record.url?scp=2542443603&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/19/5/014
DO - 10.1088/0268-1242/19/5/014
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AN - SCOPUS:2542443603
SN - 0268-1242
VL - 19
SP - 644
EP - 647
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
ER -