Electrical depth profiling in thin SiON layers

A. Rozenblat, Y. Rosenwaks, L. Segev, H. Cohen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray photoelectron spectroscopy (XPS) based controlled surface charging (CSC), are compared with independent time of flight secondary ion mass spectroscopy and angle resolved XPS data. Inhomogeneous composition with significant nitrogen enrichment at the top of the oxide layer is observed. Capabilities of the CSC method in treating heterostructures of poor chemical contrast are discussed.

Original languageEnglish
Article number053116
JournalApplied Physics Letters
Issue number5
StatePublished - 2009


Dive into the research topics of 'Electrical depth profiling in thin SiON layers'. Together they form a unique fingerprint.

Cite this