Electrical depth profiling in thin SiON layers

A. Rozenblat; Y. Rosenwaks; L. Segev; H. Cohen

doi:10.1063/1.3073050

Electrical depth profiling in thin SiON layers

A. Rozenblat, Y. Rosenwaks, L. Segev, H. Cohen^*

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray photoelectron spectroscopy (XPS) based controlled surface charging (CSC), are compared with independent time of flight secondary ion mass spectroscopy and angle resolved XPS data. Inhomogeneous composition with significant nitrogen enrichment at the top of the oxide layer is observed. Capabilities of the CSC method in treating heterostructures of poor chemical contrast are discussed.

Original language	English
Article number	053116
Journal	Applied Physics Letters
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.3073050
State	Published - 2009

Access to Document

10.1063/1.3073050

Cite this

@article{dc8dca7cd40c45a69fc67d77875d6d89,

title = "Electrical depth profiling in thin SiON layers",

abstract = "The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray photoelectron spectroscopy (XPS) based controlled surface charging (CSC), are compared with independent time of flight secondary ion mass spectroscopy and angle resolved XPS data. Inhomogeneous composition with significant nitrogen enrichment at the top of the oxide layer is observed. Capabilities of the CSC method in treating heterostructures of poor chemical contrast are discussed.",

author = "A. Rozenblat and Y. Rosenwaks and L. Segev and H. Cohen",

year = "2009",

doi = "10.1063/1.3073050",

language = "אנגלית",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Electrical depth profiling in thin SiON layers

AU - Rozenblat, A.

AU - Rosenwaks, Y.

AU - Segev, L.

AU - Cohen, H.

PY - 2009

Y1 - 2009

N2 - The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray photoelectron spectroscopy (XPS) based controlled surface charging (CSC), are compared with independent time of flight secondary ion mass spectroscopy and angle resolved XPS data. Inhomogeneous composition with significant nitrogen enrichment at the top of the oxide layer is observed. Capabilities of the CSC method in treating heterostructures of poor chemical contrast are discussed.

AB - The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray photoelectron spectroscopy (XPS) based controlled surface charging (CSC), are compared with independent time of flight secondary ion mass spectroscopy and angle resolved XPS data. Inhomogeneous composition with significant nitrogen enrichment at the top of the oxide layer is observed. Capabilities of the CSC method in treating heterostructures of poor chemical contrast are discussed.

UR - http://www.scopus.com/inward/record.url?scp=59849096353&partnerID=8YFLogxK

U2 - 10.1063/1.3073050

DO - 10.1063/1.3073050

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:59849096353

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053116

ER -

Electrical depth profiling in thin SiON layers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this