Electric field effects in stacked dots

S. A. Maksimenko, G. Ya Slepyan, A. Hoffmann, D. Bimberg

Research output: Contribution to journalConference articlepeer-review

Abstract

We present the results of effective mass calculations for the optical properties of single and stacked InGaAs quantum dots (QD) in the presence of a longitudinal electric field. We have empirically included the effect of inhomogeneity in the In distribution. This effect leads to inverted electron-hole mean vertical positions (i.e. the holes lay above the electrons). We have calculated the variation of the fundamental interband transitions with the electric field, as well as the absorption spectrum, taking into account Gaussian fluctuations in the vertical and lateral dimensions.

Original languageEnglish
Pages (from-to)551-554
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume190
Issue number2
DOIs
StatePublished - Apr 2002
Externally publishedYes
Event7th International Conference on Optics and Excitons in Confined Systems - Montpellier, France
Duration: 3 Sep 20017 Sep 2001

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