Electric field effects in stacked dots

S. A. Maksimenko; G. Ya Slepyan; A. Hoffmann; D. Bimberg

doi:10.1002/1521-396X(200204)190:2<551::AID-PSSA551>3.0.CO;2-S

Electric field effects in stacked dots

S. A. Maksimenko, G. Ya Slepyan, A. Hoffmann, D. Bimberg

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present the results of effective mass calculations for the optical properties of single and stacked InGaAs quantum dots (QD) in the presence of a longitudinal electric field. We have empirically included the effect of inhomogeneity in the In distribution. This effect leads to inverted electron-hole mean vertical positions (i.e. the holes lay above the electrons). We have calculated the variation of the fundamental interband transitions with the electric field, as well as the absorption spectrum, taking into account Gaussian fluctuations in the vertical and lateral dimensions.

Original language	English
Pages (from-to)	551-554
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	190
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200204)190:2<551::AID-PSSA551>3.0.CO;2-S
State	Published - Apr 2002
Externally published	Yes
Event	7th International Conference on Optics and Excitons in Confined Systems - Montpellier, France Duration: 3 Sep 2001 → 7 Sep 2001

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AU - Hoffmann, A.

AU - Bimberg, D.

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N2 - We present the results of effective mass calculations for the optical properties of single and stacked InGaAs quantum dots (QD) in the presence of a longitudinal electric field. We have empirically included the effect of inhomogeneity in the In distribution. This effect leads to inverted electron-hole mean vertical positions (i.e. the holes lay above the electrons). We have calculated the variation of the fundamental interband transitions with the electric field, as well as the absorption spectrum, taking into account Gaussian fluctuations in the vertical and lateral dimensions.

AB - We present the results of effective mass calculations for the optical properties of single and stacked InGaAs quantum dots (QD) in the presence of a longitudinal electric field. We have empirically included the effect of inhomogeneity in the In distribution. This effect leads to inverted electron-hole mean vertical positions (i.e. the holes lay above the electrons). We have calculated the variation of the fundamental interband transitions with the electric field, as well as the absorption spectrum, taking into account Gaussian fluctuations in the vertical and lateral dimensions.

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Electric field effects in stacked dots

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