Effects of surface treatment on static characteristics of In/Cd1−xZnxTe/In and In/Cd1−xMnxTe/In devices

A. Brovko; A. Adelberg; A. Ruzin

doi:10.1016/j.nima.2020.163387

Effects of surface treatment on static characteristics of In/Cd_1−xZn_xTe/In and In/Cd_1−xMn_xTe/In devices

A. Brovko, A. Adelberg, A. Ruzin^*

^*Corresponding author for this work

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd_1−xZn_xTe and Cd_1−xMn_xTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device's performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current–voltage dependence (I-V). We also compare this correlation between Cd_1−xZn_xTe and Cd_1−xMn_xTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.

Original language	English
Article number	163387
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	957
DOIs	https://doi.org/10.1016/j.nima.2020.163387
State	Published - 21 Mar 2020

Funding

Funders	Funder number
Israeli branch of GE Healthcare
Weizmann Institute of Science
Ministry of Science, Technology and Space	3-12951

Keywords

AFM
CPD
CdMnTe
CdZnTe
I-V
XPS

Access to Document

10.1016/j.nima.2020.163387

Cite this

@article{6d0f65f88f2d42b49620d0e59bdfd7f8,

title = "Effects of surface treatment on static characteristics of In/Cd1−xZnxTe/In and In/Cd1−xMnxTe/In devices",

abstract = "Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd1−xZnxTe and Cd1−xMnxTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device's performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current–voltage dependence (I-V). We also compare this correlation between Cd1−xZnxTe and Cd1−xMnxTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.",

keywords = "AFM, CPD, CdMnTe, CdZnTe, I-V, XPS",

author = "A. Brovko and A. Adelberg and A. Ruzin",

note = "Publisher Copyright: {\textcopyright} 2020",

year = "2020",

month = mar,

day = "21",

doi = "10.1016/j.nima.2020.163387",

language = "אנגלית",

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journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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Effects of surface treatment on static characteristics of In/Cd_1−xZn_xTe/In and In/Cd_1−xMn_xTe/In devices. / Brovko, A.; Adelberg, A.; Ruzin, A.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 957, 163387, 21.03.2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of surface treatment on static characteristics of In/Cd1−xZnxTe/In and In/Cd1−xMnxTe/In devices

AU - Brovko, A.

AU - Adelberg, A.

AU - Ruzin, A.

PY - 2020/3/21

Y1 - 2020/3/21

N2 - Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd1−xZnxTe and Cd1−xMnxTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device's performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current–voltage dependence (I-V). We also compare this correlation between Cd1−xZnxTe and Cd1−xMnxTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.

AB - Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd1−xZnxTe and Cd1−xMnxTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device's performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current–voltage dependence (I-V). We also compare this correlation between Cd1−xZnxTe and Cd1−xMnxTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.

KW - AFM

KW - CPD

KW - CdMnTe

KW - CdZnTe

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