Effects of surface treatment on static characteristics of In/Cd1−xZnxTe/In and In/Cd1−xMnxTe/In devices

A. Brovko, A. Adelberg, A. Ruzin

Research output: Contribution to journalArticlepeer-review

Abstract

Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd1−xZnxTe and Cd1−xMnxTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device's performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current–voltage dependence (I-V). We also compare this correlation between Cd1−xZnxTe and Cd1−xMnxTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.

Keywords

  • AFM
  • CPD
  • CdMnTe
  • CdZnTe
  • I-V
  • XPS

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