Effects of oxygen partial pressure during deposition on the properties of ion-beam-sputtered indium-tin oxide thin films

Keyphrases

• X-ray Photoelectron Spectroscopy 100%
• Ion Beam 100%
• Auger Electron Spectroscopy 100%
• Effect of Oxygen Partial Pressure 100%
• Indium Tin Oxide Thin Film 100%
• Indium Tin Oxide Film 100%
• Oxygen Pressure 50%
• Carrier Density 50%
• Deposition Process 50%
• Electron Mobility 50%
• Oxidation State 50%
• Electrical Transport Measurements 50%
• Direct Evaluation 50%
• Oxygen Vacancy Concentration 50%

Material Science

• Thin Films 100%
• Indium Tin Oxide 100%
• Film 66%
• Photoemission Spectroscopy 66%
• Auger Electron Spectroscopy 66%
• Oxide Film 66%
• Carrier Concentration 33%
• Electron Mobility 33%
• Oxygen Vacancy 33%