Effects of Different Lead Magnetizations on the Datta-Das Spin Field-Effect Transistor

A. Aharony*, O. Entin-Wohlman, K. Sarkar, R. I. Shekhter, M. Jonson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A Datta-Das spin field-effect transistor is built of a one-dimensional weak link, with Rashba spin-orbit interactions (SOIs), which connects two magnetized reservoirs. The particle and spin currents between the two reservoirs are calculated to lowest order in the tunneling through the weak link and in the wide-band approximation, with emphasis on their dependence on the origins of the "bare" magnetizations in the reservoirs. The SOI is found to generate magnetization components in each reservoir, which rotate in the plane of the electric field (generating the SOI) and the weak link, only if the "bare" magnetization of the other reservoir has a nonzero component in that plane. The SOI affects the charge current only if both reservoirs are polarized. The charge current is conserved, but the transverse rotating magnetization current is not conserved because the SOI in the weak link generates extra spin polarizations which are injected into the reservoirs.

Original languageEnglish
Pages (from-to)11094-11100
Number of pages7
JournalJournal of Physical Chemistry C
Volume123
Issue number17
DOIs
StatePublished - 2019

Funding

FundersFunder number
Israel Ministry of Science and Technology3-11173
Israel Science Foundation
PAZY Foundation

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