TY - JOUR
T1 - Effective uncooled infrared bolometer based on SOI gate all around electrostatically formed nanowire transistors
AU - Shimanovich, Klimentiy
AU - Mutsafi, Zoe
AU - Rosenwaks, Yossi
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
PY - 2020/9
Y1 - 2020/9
N2 - This paper presents a novel micro-bolometer structure based on SOI gate all around Electrostatically Formed Nanowire (GAA EFN) transistors. The new design enables formation of the EFN conductive channels in the volume of the SOI devices layers, far from the top and bottom silicon/oxide interfaces, thus reducing the noise level and increasing the temperature sensitivity to 13.3%/K. Detailed electrical and thermal simulations show that the micro-bolometer structure has an effective responsivity of 1.95 × 103 A/W, noise equivalent power of 561 fW, noise equivalent temperature difference of 8 mK, and a thermal time constant of 35 msec, when operated in depletion all around mode (DAA) at the sub-threshold regime.
AB - This paper presents a novel micro-bolometer structure based on SOI gate all around Electrostatically Formed Nanowire (GAA EFN) transistors. The new design enables formation of the EFN conductive channels in the volume of the SOI devices layers, far from the top and bottom silicon/oxide interfaces, thus reducing the noise level and increasing the temperature sensitivity to 13.3%/K. Detailed electrical and thermal simulations show that the micro-bolometer structure has an effective responsivity of 1.95 × 103 A/W, noise equivalent power of 561 fW, noise equivalent temperature difference of 8 mK, and a thermal time constant of 35 msec, when operated in depletion all around mode (DAA) at the sub-threshold regime.
KW - CMOS temperature sensor
KW - Electrostatically formed nanowire
KW - Multiple gates field effect transistor
KW - SOIGAAEFN
KW - TMOS
UR - http://www.scopus.com/inward/record.url?scp=85092585289&partnerID=8YFLogxK
U2 - 10.1088/2631-8695/aba090
DO - 10.1088/2631-8695/aba090
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AN - SCOPUS:85092585289
SN - 2631-8695
VL - 2
JO - Engineering Research Express
JF - Engineering Research Express
IS - 3
M1 - 035005
ER -