Effective uncooled infrared bolometer based on SOI gate all around electrostatically formed nanowire transistors

Klimentiy Shimanovich, Zoe Mutsafi, Yossi Rosenwaks*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a novel micro-bolometer structure based on SOI gate all around Electrostatically Formed Nanowire (GAA EFN) transistors. The new design enables formation of the EFN conductive channels in the volume of the SOI devices layers, far from the top and bottom silicon/oxide interfaces, thus reducing the noise level and increasing the temperature sensitivity to 13.3%/K. Detailed electrical and thermal simulations show that the micro-bolometer structure has an effective responsivity of 1.95 × 103 A/W, noise equivalent power of 561 fW, noise equivalent temperature difference of 8 mK, and a thermal time constant of 35 msec, when operated in depletion all around mode (DAA) at the sub-threshold regime.

Original languageEnglish
Article number035005
JournalEngineering Research Express
Volume2
Issue number3
DOIs
StatePublished - Sep 2020

Keywords

  • CMOS temperature sensor
  • Electrostatically formed nanowire
  • Multiple gates field effect transistor
  • SOIGAAEFN
  • TMOS

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