Abstract
Amorphous films of Ge 34Ga 2S 64 were deposited on quartz substrates by using thermal evaporation method. The optical parameters of as-deposited and annealed films are calculated using the Swanepoel method and Tauc law from the optical transmission spectra. After the heat treatment of as-deposited films at 375°C for 2 h, the thermal-bleaching effects are observed, which are related to the reduction of clusters and fragments, as well as the density of homopolar bonds confirmed by the Raman spectra. As a result, the absorption spectra are blue shifted, the optical band gap of the studied films is increased by 0.118 eV, and the surface roughness is decreased by 0.515 nm.
Original language | English |
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Pages (from-to) | 718-723 |
Number of pages | 6 |
Journal | Guangdianzi Jiguang/Journal of Optoelectronics Laser |
Volume | 23 |
Issue number | 4 |
State | Published - Apr 2012 |
Externally published | Yes |
Keywords
- Ge-Ga-S film
- Optical parameters
- Raman structure
- Thermal evaporation
- Thermal-bleaching