Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias

M. Leibovitch, Yoram Shapira, J. L. Regolini

Research output: Contribution to journalArticlepeer-review

Abstract

A recently reported decrease of the reverse current in β-FeSi 2-n-type Si diodes under sub-band-gap illumination is theoretically considered. It is shown that this effect can be explained through a reduction of the generation component of the reverse current, which is caused by a decrease in the width of the space charge region due to illumination-induced charging of deep impurities. Physical modeling of the effect is also presented.

Original languageEnglish
Pages (from-to)2214-2216
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number18
DOIs
StatePublished - 1992

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