Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias

M. Leibovitch; Yoram Shapira; J. L. Regolini

doi:10.1063/1.108298

Effect of sub-band-gap illumination on β-FeSi₂/n-type Si diodes under reverse bias

M. Leibovitch^*, Yoram Shapira, J. L. Regolini

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Research output: Contribution to journal › Article › peer-review

Abstract

A recently reported decrease of the reverse current in β-FeSi ₂-n-type Si diodes under sub-band-gap illumination is theoretically considered. It is shown that this effect can be explained through a reduction of the generation component of the reverse current, which is caused by a decrease in the width of the space charge region due to illumination-induced charging of deep impurities. Physical modeling of the effect is also presented.

Original language	English
Pages (from-to)	2214-2216
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	18
DOIs	https://doi.org/10.1063/1.108298
State	Published - 1992

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@article{f4a48d4b00fb4b618f5271cf6c01aa01,

title = "Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias",

abstract = "A recently reported decrease of the reverse current in β-FeSi 2-n-type Si diodes under sub-band-gap illumination is theoretically considered. It is shown that this effect can be explained through a reduction of the generation component of the reverse current, which is caused by a decrease in the width of the space charge region due to illumination-induced charging of deep impurities. Physical modeling of the effect is also presented.",

author = "M. Leibovitch and Yoram Shapira and Regolini, {J. L.}",

year = "1992",

doi = "10.1063/1.108298",

language = "אנגלית",

volume = "61",

pages = "2214--2216",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias

AU - Leibovitch, M.

AU - Shapira, Yoram

AU - Regolini, J. L.

PY - 1992

Y1 - 1992

N2 - A recently reported decrease of the reverse current in β-FeSi 2-n-type Si diodes under sub-band-gap illumination is theoretically considered. It is shown that this effect can be explained through a reduction of the generation component of the reverse current, which is caused by a decrease in the width of the space charge region due to illumination-induced charging of deep impurities. Physical modeling of the effect is also presented.

AB - A recently reported decrease of the reverse current in β-FeSi 2-n-type Si diodes under sub-band-gap illumination is theoretically considered. It is shown that this effect can be explained through a reduction of the generation component of the reverse current, which is caused by a decrease in the width of the space charge region due to illumination-induced charging of deep impurities. Physical modeling of the effect is also presented.

UR - http://www.scopus.com/inward/record.url?scp=36448998907&partnerID=8YFLogxK

U2 - 10.1063/1.108298

DO - 10.1063/1.108298

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:36448998907

SN - 0003-6951

VL - 61

SP - 2214

EP - 2216

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Effect of sub-band-gap illumination on β-FeSi₂/n-type Si diodes under reverse bias

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