TY - JOUR
T1 - Effect of strain on the appearance of subcritical nuclei of Ge nanohuts on Si(001)
AU - Goldfarb, I.
PY - 2005/7/8
Y1 - 2005/7/8
N2 - Real-time scanning tunneling microscopy observations of nucleation and heteroepitaxial growth of Ge nanocrystals (from germane) on Si(001) indicate that in the absence of Si-Ge intermixing the formation of full hut cluster islands is preceded by the nucleation of "subcritical" nuclei consisting of two adjacent truncated tetrahedral pyramids, which, upon unification, form a tiny square-based pyramidal "critical nucleus." It is suggested that such a precursor aids in surpassing the nucleation barrier and that the recently reported gradual faceting of prepyramids is characteristic of only Ge(Si) alloys.
AB - Real-time scanning tunneling microscopy observations of nucleation and heteroepitaxial growth of Ge nanocrystals (from germane) on Si(001) indicate that in the absence of Si-Ge intermixing the formation of full hut cluster islands is preceded by the nucleation of "subcritical" nuclei consisting of two adjacent truncated tetrahedral pyramids, which, upon unification, form a tiny square-based pyramidal "critical nucleus." It is suggested that such a precursor aids in surpassing the nucleation barrier and that the recently reported gradual faceting of prepyramids is characteristic of only Ge(Si) alloys.
UR - http://www.scopus.com/inward/record.url?scp=27144515441&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.95.025501
DO - 10.1103/PhysRevLett.95.025501
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AN - SCOPUS:27144515441
SN - 0031-9007
VL - 95
JO - Physical Review Letters
JF - Physical Review Letters
IS - 2
M1 - 025501
ER -