Effect of interfacial structures on spin dependent tunneling in epitaxial L 10-FePt/MgO/FePt perpendicular magnetic tunnel junctions

G. Yang; D. L. Li; S. G. Wang; Q. L. Ma; S. H. Liang; H. X. Wei; X. F. Han; T. Hesjedal; R. C.C. Ward; A. Kohn; A. Elkayam; N. Tal; X. G. Zhang

doi:10.1063/1.4913265

Effect of interfacial structures on spin dependent tunneling in epitaxial L 1₀-FePt/MgO/FePt perpendicular magnetic tunnel junctions

G. Yang, D. L. Li, S. G. Wang^*, Q. L. Ma, S. H. Liang, H. X. Wei, X. F. Han, T. Hesjedal, R. C.C. Ward, A. Kohn, A. Elkayam, N. Tal, X. G. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1₀-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

Original language	English
Article number	083904
Journal	Journal of Applied Physics
Volume	117
Issue number	8
DOIs	https://doi.org/10.1063/1.4913265
State	Published - 28 Feb 2015
Externally published	Yes

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Yang, G., Li, D. L., Wang, S. G., Ma, Q. L., Liang, S. H., Wei, H. X., Han, X. F., Hesjedal, T., Ward, R. C. C., Kohn, A., Elkayam, A., Tal, N., & Zhang, X. G. (2015). Effect of interfacial structures on spin dependent tunneling in epitaxial L 1₀-FePt/MgO/FePt perpendicular magnetic tunnel junctions. Journal of Applied Physics, 117(8), Article 083904. https://doi.org/10.1063/1.4913265

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title = "Effect of interfacial structures on spin dependent tunneling in epitaxial L 10-FePt/MgO/FePt perpendicular magnetic tunnel junctions",

abstract = "Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.",

author = "G. Yang and Li, {D. L.} and Wang, {S. G.} and Ma, {Q. L.} and Liang, {S. H.} and Wei, {H. X.} and Han, {X. F.} and T. Hesjedal and Ward, {R. C.C.} and A. Kohn and A. Elkayam and N. Tal and Zhang, {X. G.}",

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year = "2015",

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doi = "10.1063/1.4913265",

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AU - Yang, G.

AU - Li, D. L.

AU - Wang, S. G.

AU - Ma, Q. L.

AU - Liang, S. H.

AU - Wei, H. X.

AU - Han, X. F.

AU - Hesjedal, T.

AU - Ward, R. C.C.

AU - Kohn, A.

AU - Elkayam, A.

AU - Tal, N.

AU - Zhang, X. G.

PY - 2015/2/28

Y1 - 2015/2/28

N2 - Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

AB - Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

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Effect of interfacial structures on spin dependent tunneling in epitaxial L 1₀-FePt/MgO/FePt perpendicular magnetic tunnel junctions

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