EFFECT OF HIGH-POWER LASER RADIATION ON CHARACTERISTICS OF THIN SILICON NITRIDE FILMS.

Ya O. Roizin, Khan Su Khuan

Research output: Contribution to journalArticlepeer-review

Abstract

High-power laser radiation is used in microelectronic technology for purposes such as annealing radiation defects in MOS structures after ion implantation. Irreversible changes occur in electrophysical and optical properties of transparent dielectric layers under the action of such radiation. The present study considers accumulated changes in electrical characteristics of metal-nitride-oxide-semiconductor (MNOS) structures under the action of neodymium laser pulses with an energy density below the visible damage threshold. The experimental results obtained are interpreted.

Original languageEnglish
Pages (from-to)33-35
Number of pages3
JournalSoviet microelectronics
Volume15
Issue number1
StatePublished - Jan 1986
Externally publishedYes

Fingerprint

Dive into the research topics of 'EFFECT OF HIGH-POWER LASER RADIATION ON CHARACTERISTICS OF THIN SILICON NITRIDE FILMS.'. Together they form a unique fingerprint.

Cite this