Abstract
High-power laser radiation is used in microelectronic technology for purposes such as annealing radiation defects in MOS structures after ion implantation. Irreversible changes occur in electrophysical and optical properties of transparent dielectric layers under the action of such radiation. The present study considers accumulated changes in electrical characteristics of metal-nitride-oxide-semiconductor (MNOS) structures under the action of neodymium laser pulses with an energy density below the visible damage threshold. The experimental results obtained are interpreted.
| Original language | English |
|---|---|
| Pages (from-to) | 33-35 |
| Number of pages | 3 |
| Journal | Soviet microelectronics |
| Volume | 15 |
| Issue number | 1 |
| State | Published - Jan 1986 |
| Externally published | Yes |