TY - JOUR
T1 - Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers
AU - Modak, Sushrut
AU - Chernyak, Leonid
AU - Khodorov, Sergey
AU - Lubomirsky, Igor
AU - Ruzin, Arie
AU - Xian, Minghan
AU - Ren, Fan
AU - Pearton, Stephen J.
N1 - Publisher Copyright:
© 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
PY - 2020/1/5
Y1 - 2020/1/5
N2 - We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.
AB - We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.
UR - http://www.scopus.com/inward/record.url?scp=85085254721&partnerID=8YFLogxK
U2 - 10.1149/2162-8777/ab902b
DO - 10.1149/2162-8777/ab902b
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AN - SCOPUS:85085254721
SN - 2162-8769
VL - 9
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 4
M1 - 045018
ER -