Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga₂O₃ Schottky Rectifiers

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10¹⁴ cm^-2) Si-doped β-Ga₂O₃ Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga₂O₃ Schottky rectifiers is presented.