We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.