TY - JOUR
T1 - Effect of applying an electric field during air annealing on the resistance of Ti films
AU - Parkansky, N.
AU - Alterkop, B.
AU - Goldsmith, S.
AU - Boxman, R. L.
PY - 1999/7/7
Y1 - 1999/7/7
N2 - Ti films having a thickness of 180 nm and a length of 8 mm were heated to 400°C in air while a constant voltage Us of 0-100 V dc was connected to the sample edges in series with a 100 kΩ resistance. The film resistance generally increased with time, but the resistance-time dependence had a plateau from 5 to 10-15 min of heating with Us ≥ 10 V. During this period, the film resistance was reduced by three orders of magnitude at Us = 100 V, as compared to Us = 0 and 1 V. It was shown by x-ray photoelectron spectroscopy (XPS) that the oxygen concentration in the films decreased with increasing applied voltage.
AB - Ti films having a thickness of 180 nm and a length of 8 mm were heated to 400°C in air while a constant voltage Us of 0-100 V dc was connected to the sample edges in series with a 100 kΩ resistance. The film resistance generally increased with time, but the resistance-time dependence had a plateau from 5 to 10-15 min of heating with Us ≥ 10 V. During this period, the film resistance was reduced by three orders of magnitude at Us = 100 V, as compared to Us = 0 and 1 V. It was shown by x-ray photoelectron spectroscopy (XPS) that the oxygen concentration in the films decreased with increasing applied voltage.
UR - http://www.scopus.com/inward/record.url?scp=0032676342&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/32/13/310
DO - 10.1088/0022-3727/32/13/310
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AN - SCOPUS:0032676342
SN - 0022-3727
VL - 32
SP - 1503
EP - 1505
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 13
ER -