Effect of applying an electric field during air annealing on the resistance of Ti films

N. Parkansky*, B. Alterkop, S. Goldsmith, R. L. Boxman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Ti films having a thickness of 180 nm and a length of 8 mm were heated to 400°C in air while a constant voltage Us of 0-100 V dc was connected to the sample edges in series with a 100 kΩ resistance. The film resistance generally increased with time, but the resistance-time dependence had a plateau from 5 to 10-15 min of heating with Us ≥ 10 V. During this period, the film resistance was reduced by three orders of magnitude at Us = 100 V, as compared to Us = 0 and 1 V. It was shown by x-ray photoelectron spectroscopy (XPS) that the oxygen concentration in the films decreased with increasing applied voltage.

Original languageEnglish
Pages (from-to)1503-1505
Number of pages3
JournalJournal of Physics D: Applied Physics
Volume32
Issue number13
DOIs
StatePublished - 7 Jul 1999

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