Effect of an applied voltage during annealing on the resistivity and transparency of the amorphous tin oxide films

N. Parkansky*, B. Alterkop, S. Goldsmith, R. L. Boxman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Changes in the resistivity and visible transparency of thin amorphous tin-oxide films observed after annealing in air while an electric field was applied parallel to the surface were dependent on the applied field. The effect of annealing was dependent on the magnitude of the applied field. Film composition (O/Sn ratio) in a surface layer, up to 20 nm deep, was strongly affected, also as a function of the applied field. However, the O/Sn ratio in the film, beyond 20 nm, was not affected.

Original languageEnglish
Pages (from-to)1923-1926
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number6
DOIs
StatePublished - Nov 2003

Fingerprint

Dive into the research topics of 'Effect of an applied voltage during annealing on the resistivity and transparency of the amorphous tin oxide films'. Together they form a unique fingerprint.

Cite this