TY - JOUR
T1 - Effect of an applied voltage during annealing on the resistivity and transparency of the amorphous tin oxide films
AU - Parkansky, N.
AU - Alterkop, B.
AU - Goldsmith, S.
AU - Boxman, R. L.
PY - 2003/11
Y1 - 2003/11
N2 - Changes in the resistivity and visible transparency of thin amorphous tin-oxide films observed after annealing in air while an electric field was applied parallel to the surface were dependent on the applied field. The effect of annealing was dependent on the magnitude of the applied field. Film composition (O/Sn ratio) in a surface layer, up to 20 nm deep, was strongly affected, also as a function of the applied field. However, the O/Sn ratio in the film, beyond 20 nm, was not affected.
AB - Changes in the resistivity and visible transparency of thin amorphous tin-oxide films observed after annealing in air while an electric field was applied parallel to the surface were dependent on the applied field. The effect of annealing was dependent on the magnitude of the applied field. Film composition (O/Sn ratio) in a surface layer, up to 20 nm deep, was strongly affected, also as a function of the applied field. However, the O/Sn ratio in the film, beyond 20 nm, was not affected.
UR - http://www.scopus.com/inward/record.url?scp=0842290159&partnerID=8YFLogxK
U2 - 10.1116/1.1619415
DO - 10.1116/1.1619415
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AN - SCOPUS:0842290159
SN - 0734-2101
VL - 21
SP - 1923
EP - 1926
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 6
ER -