Effect of air annealing on the electronic properties of CdS/Cu(In,Ga) Se2 solar cells

E. Moons, D. Gal, J. Beier, G. Hodes, David Cahen*, L. Kronik, L. Burstein, B. Mishori, Yoram Shapira, D. Hariskos, H. W. Schock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

The effect of air annealing on state-of-the-art, solar-cell-quality CdS/Cu(In,Ga)Se2 heterojunctions has been studied using contact potential difference and surface photovoltage measurements. The annealing treatment is shown to have no significant effect on the band lineup of the heterojunction. However, the surface photovoltage spectral response increases markedly upon air annealing. These results can be reconciled if air annealing of the junctions leads mainly to elimination of recombination centers, rather than to changes in the built-in voltage or in the band lineup. We also show that ZnO deposition has an effect on the surface photovoltage that is similar to that of air annealing.

Original languageEnglish
Pages (from-to)73-78
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume43
Issue number1
DOIs
StatePublished - 15 Aug 1996

Funding

FundersFunder number
Israeli Ministry of Science and the Arts
Israeli-German program of energy research
Kimberley Foundation Australia
Forschungszentrum Jülich

    Keywords

    • Band diagram
    • Band line-up
    • CdS
    • Cu(In,Ga)Se
    • CuInSe
    • Efficiency
    • Heterojunction
    • Optimization
    • Polycrystalline
    • Thin film
    • ZnO

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