Doping and magnetic field dependence of in-plane tunneling into YBa2Cu3O7−x: Possible evidence for the existence of a quantum critical point

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Abstract

We present tunneling measurements into (1,1,0)YBa2Cu3O7−x films at various doping levels around the optimum. We find that, above a certain doping level near optimum doping, a spontaneous zero bias conductance peak splitting, δ, appears. It increases with doping. It also increases with magnetic field applied along the c axis, for both underdoped and overdoped films. The low field susceptibility χ = dδ/dH | H→0 is maximum, possibly diverging when the spontaneous value of δ goes to zero. These results suggest a transition from a pure dx2 − y2 to a d + idxy or d + is order parameter.

Original languageEnglish
Article number177004
Pages (from-to)177004-1-177004-4
Number of pages4
JournalPhysical Review Letters
Volume87
Issue number17
StatePublished - 22 Oct 2001

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