Abstract
Distributed Bragg-reflector (DBR) diode lasers were fabricated from lattice-matched Pbo.(formula presented)wafers grown by liquid phase epitaxy. The DBR lasers operated within a limited range of heat-sink temperatures, 8.5°-38°K, with threshold current density of -3kA/cm2 at 20°K. Single longitudinal-mode operation was obtained up to more than three times the threshold current. The DBR lasers exhibited continuous tuning range of ^6 cm-1 near 775 cm-1 (12.9 (formula presented). The average tuning rate was 0.21 cm-1/°K and was much smal ler than that of the corresponding Fabry-Perot lasers, which was 2.3 cm-1/°K.
| Original language | English |
|---|---|
| Pages (from-to) | 42-47 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 438 |
| DOIs | |
| State | Published - 28 Nov 1983 |