DISTRIBUTED BRAGG REFLECTOR LEAD SALT DIODE LASERS FOR OPERATION ABOVE 77 K.

Y. Shani; A. Katzir; P. Norton; M. Tacke; H. Preier

DISTRIBUTED BRAGG REFLECTOR LEAD SALT DIODE LASERS FOR OPERATION ABOVE 77 K.

Y. Shani^*, A. Katzir, P. Norton, M. Tacke, H. Preier

^*Corresponding author for this work

School of Physics and Astronomy

Tel Aviv University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Distributed Bragg reflector double-heterostructure lasers consisting of PbSnSe and PbEuSnSe layers are discussed. The lasers are grown on p-type PbSe substrates by molecular beam epitaxy. The devices have been operated in single-mode over a range of 20 cm** minus **1 at temperatures above 77 K.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	Optical Soc of America (Technical Digest Series v 6)
Pages	34-37
Number of pages	4
ISBN (Print)	093665919X
State	Published - 1987

Cite this

@inproceedings{786096026af8406595468ca42d409bbb,

title = "DISTRIBUTED BRAGG REFLECTOR LEAD SALT DIODE LASERS FOR OPERATION ABOVE 77 K.",

abstract = "Distributed Bragg reflector double-heterostructure lasers consisting of PbSnSe and PbEuSnSe layers are discussed. The lasers are grown on p-type PbSe substrates by molecular beam epitaxy. The devices have been operated in single-mode over a range of 20 cm** minus **1 at temperatures above 77 K.",

author = "Y. Shani and A. Katzir and P. Norton and M. Tacke and H. Preier",

year = "1987",

language = "אנגלית",

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publisher = "Optical Soc of America (Technical Digest Series v 6)",

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AU - Shani, Y.

AU - Katzir, A.

AU - Norton, P.

AU - Tacke, M.

AU - Preier, H.

PY - 1987

Y1 - 1987

N2 - Distributed Bragg reflector double-heterostructure lasers consisting of PbSnSe and PbEuSnSe layers are discussed. The lasers are grown on p-type PbSe substrates by molecular beam epitaxy. The devices have been operated in single-mode over a range of 20 cm** minus **1 at temperatures above 77 K.

AB - Distributed Bragg reflector double-heterostructure lasers consisting of PbSnSe and PbEuSnSe layers are discussed. The lasers are grown on p-type PbSe substrates by molecular beam epitaxy. The devices have been operated in single-mode over a range of 20 cm** minus **1 at temperatures above 77 K.

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AN - SCOPUS:0023167357

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BT - Unknown Host Publication Title

PB - Optical Soc of America (Technical Digest Series v 6)

ER -

DISTRIBUTED BRAGG REFLECTOR LEAD SALT DIODE LASERS FOR OPERATION ABOVE 77 K.

Abstract

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