@inproceedings{b9d17f892c9347ddba5936d44ffe4020,
title = "Direct monitoring of hot-carrier accumulated charge in GaN HEMT and PHEMT devices",
abstract = "A contactless methodology of directly monitoring walkout phenomena in HEMT devices has been demonstrated for PHEMT and GaN HEMT devices. No walkout phenomena have been observed in GaN HEMT, while evolution of the surface photovoltage spectra (SPS) indicates accumulation of the positive electrical charge the buffer and surface layer of device, after RF power stress. In PHEMT, walkout phenomena are due to the accumulation of the charge at surface traps, which have been introduced during manufacturing process. The SPS make it easy to monitor this charge accumulation during RF power stress.",
keywords = "Device design, HEMT, Impact ionization, Surface photovoltage spectroscopy, Walkout",
author = "A. Stopel and A. Khramtsov and O. Katz and S. Solodky and T. Baksht and Y. Knafo and M. Leibovitch and Yoram Shapira",
year = "2005",
language = "אנגלית",
isbn = "1893580067",
series = "2005 International Conference on Compound Semiconductor Manufacturing Technology",
booktitle = "2005 International Conference on Compound Semiconductor Manufacturing Technology",
note = "2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 ; Conference date: 11-04-2005 Through 14-04-2005",
}