Direct low-energy electron beam nanolithography

Daniel Aronov, Gil Rosenman

Research output: Contribution to journalArticlepeer-review


We describe here an alternative approach to direct low-energy electron beam nanolithography process with no conventional deposition of any resist or self-assembled monolayer. The method is based on direct formation of ultrathin dielectric layer on electron irradiated surface, without generation of structural defects. High-quality electron-induced patterns with lateral resolutions of about 10 nm are demonstrated on SiO2 surface.

Original languageEnglish
Pages (from-to)2430-2433
Number of pages4
JournalSurface Science
Issue number16
StatePublished - 15 Aug 2009


  • Electron beam
  • Nanolithography


Dive into the research topics of 'Direct low-energy electron beam nanolithography'. Together they form a unique fingerprint.

Cite this