Direct evidence for quantum contact resistance effects in V-groove quantum wires

D. Kaufman, B. Dwir, A. Rudra, I. Utke, A. Palevski, E. Kapon

Research output: Contribution to journalConference articlepeer-review

Abstract

The effect of quantum contact resistance on one-dimensional (1D) electrical conductance was investigated in quantum wires (QWR) realized with V-shaped GaAs/AlGaAs heterostructure. The transition length between the electron reservoir and the QWR was controlled by employing an electric field. The required transition length is found to decrease with increasing overlap between the 2D states in the reservoir and the 1D states in the QWR.

Original languageEnglish
Pages (from-to)756-759
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
StatePublished - May 2000
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 12 Jul 199916 Jul 1999

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