Abstract
The effect of diffusional relaxation on the random sequential deposition process is studied in the limit of fast deposition. Expressions for the coverage as a function of time are analytically derived for both the short-time and long-time regimes. These results are tested and compared with numerical simulations.
Original language | English |
---|---|
Pages (from-to) | L271-L276 |
Journal | Journal of Physics A: Mathematical and General |
Volume | 30 |
Issue number | 9 |
DOIs | |
State | Published - 7 May 1997 |
Externally published | Yes |