Differential capacitance technique for characterization of hot carrier induced degradation in p-channel MOSFETs

Keyphrases

• MOSFET 100%
• Capacitance 100%
• P-channel 100%
• Differential Capacitance 100%
• Capacitance Technique 100%
• Hot-carrier-induced Degradation 100%
• Bias Stress 50%
• Device Simulation 50%
• Active Sites 50%
• Induced Degradation 50%
• Novel Technique 50%
• Detrapping 50%
• Constant Bias 50%
• Hot Electrons 50%
• Trapped Charge 50%
• Electron Induced 50%
• Measurement Condition 50%
• Difference Curve 50%
• Two Dimensional Devices 50%
• MOS Devices 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Induced Degradation 100%
• Experimental Result 50%
• Two Dimensional 50%
• Hot Electron 50%
• Measurement Condition 50%
• Active Site 50%

Material Science

• Capacitance 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Hot Carrier 100%
• Hot Electron 33%