TY - JOUR
T1 - Differential capacitance technique for characterization of hot carrier induced degradation in p-channel MOSFETs
AU - Kugelmass, Sheldon M.
AU - Shacham-Diamand, Yosi
AU - Krusius, J. Peter
PY - 1990/12
Y1 - 1990/12
N2 - A novel technique for the characterization of hot-electron-induced degradation in p-channel MOS devices is described. By measuring the gate to source/drain capacitance both before and after constant bias stressing, a capacitance difference curve can be generated from which the amount of electrically active sites is extracted. Detrapping of trapped charge has been observed and is shown to be sensitive to measurement conditions. Two-dimensional device simulations have been performed to analyze and confirm these experimental results.
AB - A novel technique for the characterization of hot-electron-induced degradation in p-channel MOS devices is described. By measuring the gate to source/drain capacitance both before and after constant bias stressing, a capacitance difference curve can be generated from which the amount of electrically active sites is extracted. Detrapping of trapped charge has been observed and is shown to be sensitive to measurement conditions. Two-dimensional device simulations have been performed to analyze and confirm these experimental results.
UR - http://www.scopus.com/inward/record.url?scp=0025576838&partnerID=8YFLogxK
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AN - SCOPUS:0025576838
SN - 0163-1918
SP - 77
EP - 80
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
T2 - 1990 International Electron Devices Meeting
Y2 - 9 December 1990 through 12 December 1990
ER -