Differential capacitance technique for characterization of hot carrier induced degradation in p-channel MOSFETs

Sheldon M. Kugelmass, Yosi Shacham-Diamand, J. Peter Krusius

Research output: Contribution to journalConference articlepeer-review

Abstract

A novel technique for the characterization of hot-electron-induced degradation in p-channel MOS devices is described. By measuring the gate to source/drain capacitance both before and after constant bias stressing, a capacitance difference curve can be generated from which the amount of electrically active sites is extracted. Detrapping of trapped charge has been observed and is shown to be sensitive to measurement conditions. Two-dimensional device simulations have been performed to analyze and confirm these experimental results.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1990
Externally publishedYes
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 9 Dec 199012 Dec 1990

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