Abstract
The refractive index of PbSnTe is calculated as a function of carrier concentration, wavelength and temperature. The derived values are used in the determination of the electric field distribution and the optical confinement in homostructure Pb0.85Sn0.15Te lasers. It is shown that large refractive index steps and efficient optical confinement can be achieved in homostructure lasers having an appropriate carrier concentration profile.
Original language | English |
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Pages (from-to) | 317-322 |
Number of pages | 6 |
Journal | Infrared Physics |
Volume | 22 |
Issue number | 6 |
DOIs | |
State | Published - Nov 1982 |