Abstract
A direct technique for determining band offsets at semiconductor heterojunctions is presented, which is applicable to at least any type I heterojunction, where the top layer doping is sufficiently low. The technique is based on surface photovoltage spectroscopy measurements as a function of overlayer thickness. A numerically simulated example shows that the band offset is a very strong function of the critical overlayer thickness, at which the overlayer contribution to the surface photovoltage spectrum appears. The method is applied to the technologically important InP/InGaAs heterojunction and is shown to yield the commonly accepted band offset value.
Original language | English |
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Pages (from-to) | 2587-2589 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 17 |
DOIs | |
State | Published - 21 Oct 1996 |