Determining band offsets using surface photovoltage spectroscopy: The InP/In0.53Ga0.47As heterojunction

M. Leibovitch*, L. Kronik, B. Mishori, Yoram Shapira, C. M. Hanson, A. R. Clawson, Prakhya Ram

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A direct technique for determining band offsets at semiconductor heterojunctions is presented, which is applicable to at least any type I heterojunction, where the top layer doping is sufficiently low. The technique is based on surface photovoltage spectroscopy measurements as a function of overlayer thickness. A numerically simulated example shows that the band offset is a very strong function of the critical overlayer thickness, at which the overlayer contribution to the surface photovoltage spectrum appears. The method is applied to the technologically important InP/InGaAs heterojunction and is shown to yield the commonly accepted band offset value.

Original languageEnglish
Pages (from-to)2587-2589
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number17
DOIs
StatePublished - 21 Oct 1996

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