TY - JOUR
T1 - Detection of heating in current-carrying molecular junctions by Raman scattering
AU - Ioffe, Zvi
AU - Shamai, Tamar
AU - Ophir, Ayelet
AU - Noy, Gilad
AU - Yutsis, Ilan
AU - Kfir, Kobi
AU - Cheshnovsky, Ori
AU - Selzer, Yoram
N1 - Funding Information:
We thank A. Nitzan from TAU for very insightful discussions. Support by the GIF young scientist program for Y.S. is gratefully acknowledged. T.S. thanks the Israeli Ministry of Science and Technology for an Eshkol fellowship. The research was supported by the Israel Science foundation under grant no. 987/05 (OC).
PY - 2008/12
Y1 - 2008/12
N2 - As the scaling of electronic components continues, local heating will have an increasing influence on the stability and performance of nanoscale electronic devices. In particular, the low heat capacity of molecular junctions means that it will be essential to understand local heating and heat conduction in these junctions. Here we report a method for directly monitoring the effective temperature of current-carrying junctions with surface enhanced Raman spectroscopy (SERS) that involves measuring both the Stokes and anti-Stokes components of the Raman scattering. All the Raman-active modes in our system show similar heating as a function of bias at room temperature, which suggests fast vibrational relaxation processes inside the junctions. These results demonstrate the power of direct spectroscopic probing of heating and cooling processes in nanostructures.
AB - As the scaling of electronic components continues, local heating will have an increasing influence on the stability and performance of nanoscale electronic devices. In particular, the low heat capacity of molecular junctions means that it will be essential to understand local heating and heat conduction in these junctions. Here we report a method for directly monitoring the effective temperature of current-carrying junctions with surface enhanced Raman spectroscopy (SERS) that involves measuring both the Stokes and anti-Stokes components of the Raman scattering. All the Raman-active modes in our system show similar heating as a function of bias at room temperature, which suggests fast vibrational relaxation processes inside the junctions. These results demonstrate the power of direct spectroscopic probing of heating and cooling processes in nanostructures.
UR - http://www.scopus.com/inward/record.url?scp=57449117291&partnerID=8YFLogxK
U2 - 10.1038/nnano.2008.304
DO - 10.1038/nnano.2008.304
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AN - SCOPUS:57449117291
SN - 1748-3387
VL - 3
SP - 727
EP - 732
JO - Nature Nanotechnology
JF - Nature Nanotechnology
IS - 12
ER -